threshold voltage
英 [ˈθreʃhəʊld ˈvəʊltɪdʒ]
美 [ˈθreʃhoʊld ˈvoʊltɪdʒ]
网络 门槛电压; 临界电压; 阈值电压; 临限电压; 门限电压
双语例句
- Temperature Characteristics Model of Threshold Voltage in Small Size VDMOS
小尺寸VDMOS阈值电压温度特性模型 - The primary performance degradation of SOI device in the total dose irradiation is the back-channel leakage current caused by gate threshold voltage shift.
SOI（绝缘体上硅）器件在总剂量辐照下的主要性能退化是由于SOI器件的背栅阈值电压漂移引起的背沟道漏电。 - As technology evolves, the threshold voltage will be re-duced accordingly, which results in an exponential increase of standby power.
随着工艺的发展，器件阈值电压的降低，导致静态功耗呈指数形式增长。 - Threshold voltage model of strained Si channel nMOSFET
应变Si沟道nMOSFET阈值电压模型 - The paper has analyzed temperature characteristics on high voltage power LDMOST s threshold voltage and given a calculation formula of its temperature coefficient from computing results.
阈值电压的温度系数可以用温度的线性表达式来计算，从而可以得出功率LDMOS阈值电压的温度系数最优化分析。 - The reflectivity, multi-domain structure and threshold voltage of the liquid crystal devices were studied by the reflective properties of P and FC state and the microscopic structure.
文章主要通过胆甾相液晶显示器件在P态和FC态的反射特征谱线和微观结构来研究表面性能对显示器件的反射率、多畴结构及阈值电压的影响。 - The threshold voltage of SiC Schottky barrier source/ drain MOSFET
SiC肖特基源漏MOSFET的阈值电压 - Then, an implicit expression for electron density and a closed form of threshold voltage are presented fully comprising quantum mechanical ( QM) effects.
给出了电子密度的隐式表达式和阈电压的显式表达式，它们都充分考虑了量子力学效应。 - Using the averaged switch modeling approach, a non-linear large-signal averaged model of non-ideal PWM switch is derived, taking into account all parasitic resistances and threshold voltage of diode.
运用平均开关建模法，建立非理想PWM开关的非线性大信号平均模型，包含全部寄生电阻和二极管的正向压降。 - It compensates for the temperature characteristics of the resistor and the threshold voltage VTH in such a way that the reference current has small temperature dependence.
主要利用电阻的温度系数与阈值电压VTH温度系数相同的特性实现温度补偿原理。 - One new domino logic circuit whose architecture is based on full PMOS sleep transistors and a dual threshold voltage CMOS technology is introduced.
介绍一种全部由PMOS休眠管实现的双阈值电压多米诺逻辑电路。 - Input current at positive-going threshold voltage
正向阈电压下输入电流 - Design of Voltage Reference Based on CMOS Threshold Voltage
基于CMOS阈值电压的基准电路设计 - Its function is to provide a latching switch action upon sensing an input threshold voltage, with reset accomplished by an external clock signal.
它的功能是当感应到输入电压界限时提供一个锁存开关，通过外部时钟信号完成复位。 - Experimental results indicate that the threshold voltage becomes higher as the inflow velocity becomes higher and the flow separation becomes more serious.
实验结果表明：分离越严重，来流速度越大，有效抑制翼型失速分离的阈值电压越大； - Design and Analysis of Electrostatic Microrelay with Low Threshold Voltage in MEMS
基于MEMS技术的低阈值电压静电型微继电器的设计与研究 - JEDEC? The input threshold voltage when the input voltage is falling.
在输入电压下降时的输入门限电压。 - Considering that in2-TFT pixel driving circuit and the threshold voltage of thin-film-transistor ( TFT) influences the current in OLED, 4-TFT pixel driving circuit based on polysilicon was designed.
为了消除2-TFT像素驱动电路中TFT阈值电压变化对OLED像素电流的影响，设计了基于多晶硅的4-TFT像素驱动电路。 - Analysis of Bar Domain and Lump Domain for STN Product of High Threshold Voltage
高阈值STN产品的条状畴和块状畴分析 - The analytical solutions to1D Schrdinger equation ( in depth direction) in double gate ( DG) MOSFETs are derived to calculate electron density and threshold voltage.
推导了双栅MOSFET器件在深度方向上薛定谔方程的解析解以求得电子密度和阈电压。 - In addition, the threshold voltage is capable of being finely tuned with a proper gate bias.
除此之外，由于强烈的闸极耦合效应，在分离的上闸极加上适当的偏压，便可精确地调控临限电压。 - Mechanical Topology Optimization for Low Threshold Voltage Capacitive RF MEMS Switches
低驱动电压电容式RFMEMS开关结构设计优化 - The threshold voltage's shift versus the dose rate was analyzed on this device.
分析了该电路的阈值电压随辐射剂量率的变化关系。 - The temperature compensated reference voltage stabilizes the lockout threshold voltage and hysteresis quality.
通过对自产生的基准电压进行温度补偿确保了锁定阈值电压和迟滞量稳定。 - Deduced has been a relationship between the threshold voltage of MOSFET and the radiation dose rate.
计算了MOSFET阈电压与辐射剂量率之间的关系。 - Enhanced degradation appears in both threshold voltage and transconductance under pulse stress.
在脉冲应力下，阈值电压和跨导的退化增强。 - In order to measure frequency accurately, on hardware circuit design a Smite variable threshold voltage comparer is used.
为了能够准确地进行频率的测量，因此在硬件电路方面设计了一个具有施密特特型的可变门限的电压比较器。 - The dependence of the threshold voltage on pressure, gap widths has also been studied in the same range.
也研究了在此气压范围内火花室阈值电压与气压和间隙宽度的关系。 - We deduced a expressions for threshold voltage temperature coefficient of short channel MOST.
推导了了一个短沟道MOST阈值电压温度系数表达式； - A simplified threshold voltage model of fully depleted SOI MOSFET is proposed.
提出了一种简化的全耗尽SOIMOSFET阈值电压解析模型。